Solving Poisson’s Equation for Semico... Log Out | Topics | Search
Moderators | Register | Edit Profile

FlexPDE User's Forum » User Postings » Solving Poisson’s Equation for Semiconductor Oxide Interface « Previous Next »

Author Message
Top of pagePrevious messageNext messageBottom of page Link to this message

Abhishek (amotayed)
New member
Username: amotayed

Post Number: 1
Registered: 01-2007
Posted on Sunday, February 04, 2007 - 08:40 pm:   

Dear Dr. Nelson,
I am trying to solve the standard Poisson's equation for an oxide semiconductor interface. I am having some problem in assigning proper boundary conditions at the semiconductor-oxide interface. How to assign the continuity of normal component of D at the interface? I wrote the program but the solution is incorrect. I would appreciate if you could suggest me something or direct me towards any example.
Thanks
Abhishek

application/octet-streamPoisson's Equation
NWFET_Simplemodel.pde (1.2 k)
Top of pagePrevious messageNext messageBottom of page Link to this message

Robert G. Nelson (rgnelson)
Moderator
Username: rgnelson

Post Number: 757
Registered: 06-2003
Posted on Monday, February 05, 2007 - 03:26 pm:   

What platform and version are you running?

When I run this problem, I get a floating-point overflow because the iteration is diverging.

The problem seems to be your source term. If I replace it with something simple, the solution converges.

As to the question of interior boundary conditions, you don't have to do anything. If you re-read the documentation concerning Natural Boundary conditions, you will see that when you write div(eps*grad(u)) the default interior boundary condition is the continuity of the normal component of eps*grad(u), as required by Maxwell's equations.
Top of pagePrevious messageNext messageBottom of page Link to this message

Louis Gerrer (imep)
New member
Username: imep

Post Number: 1
Registered: 01-2008
Posted on Tuesday, January 22, 2008 - 09:22 am:   

Hello,
I'm a new user, solving the same kind of problem in 2D.
I've got a problem with calculating the flow of the current density through a line (because of the problem dimension, the surface between oxyde and semiconductor is just a line) ; the command LINE_INTEGRAL does not match so I use a brutal approximation : Is=integral(Jx*ustep(L/20-x))/(L/20) .
I'm sure their is a better way to do this ; could you please enligth my darkness ???

imep
Top of pagePrevious messageNext messageBottom of page Link to this message

Robert G. Nelson (rgnelson)
Moderator
Username: rgnelson

Post Number: 1048
Registered: 06-2003
Posted on Tuesday, January 22, 2008 - 02:04 pm:   

You'll have to be a little more complete in your description. I can't figure out what you are talking about.


Top of pagePrevious messageNext messageBottom of page Link to this message

Louis Gerrer (imep)
New member
Username: imep

Post Number: 2
Registered: 01-2008
Posted on Wednesday, January 23, 2008 - 10:25 am:   

Thank you for your answer,
I've understood our mistake : we though we couldn't use line_integral because we ignored the possibility of naming separatly each segment of a domain!!!
this was a really stupid question, sorry for wasting your time ; next time I'll ask something intersting...

Add Your Message Here
Post:
Username: Posting Information:
This is a private posting area. Only registered users and moderators may post messages here.
Password:
Options: Enable HTML code in message
Automatically activate URLs in message
Action:

Topics | Last Day | Last Week | Tree View | Search | Help/Instructions | Program Credits Administration